Infineon Applied sciences AG has partnered with FOXESS, a distinguished participant within the inexperienced power sector, to reinforce the effectivity and energy density of power storage purposes. Infineon will provide its superior energy semiconductor units to FOXESS, facilitating the event of revolutionary options within the inexperienced power trade.
Particularly, Infineon will present FOXESS with its CoolSiC MOSFETs 1200 V for industrial power storage purposes, together with EiceDRIVER gate drivers. Moreover, FOXESS’ string PV inverters will make the most of Infineon’s IGBT7 H7 1200 V energy semiconductor units.
FOXESS’ H3PRO power storage sequence makes use of Infineon’s CoolSiC MOSFETs 1200 V.
As the worldwide marketplace for photovoltaic power storage methods (PV-ES) continues to broaden quickly, bettering energy density has turn into essential for achievement. Infineon’s energy semiconductor units, together with CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V sequence, incorporate state-of-the-art semiconductor applied sciences tailor-made to industrial purposes, addressing the rising demand for effectivity and energy density in power storage purposes.
Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure at Infineon Applied sciences Higher China, expressed satisfaction in collaborating with FOXESS to drive decarbonization via larger energy density and extra dependable methods for PV-ES purposes.
FOXESS’ R Sequence redefines the general design of the 100 kW mannequin through the use of Infineon’s IGBT7 H7 sequence.
Mr. Zhu Jingcheng, Chairman of FOXESS, highlighted the numerous enhancements in product reliability and effectivity achieved via the assist of Infineon’s superior parts. He emphasised Infineon’s technical experience and product high quality as key components strengthening FOXESS’ competitiveness and market presence.
Infineon’s CoolSiC MOSFETs 1200 V supply excessive energy density, lowering losses by 50 % and offering further power with out growing battery measurement. FOXESS’ H3PRO 15 kW-30 kW power storage sequence, outfitted with Infineon’s CoolSiC MOSFETs, has achieved exceptional effectivity and gross sales development within the international market.
Equally, Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V sequence enhances the general effectivity and energy density of inverters. By leveraging Infineon’s superior energy semiconductor units, FOXESS has optimized the design of its R Sequence 75-110 kW industrial and business mannequin, attaining excellent effectivity of as much as 98.6 %.
Infineon provides a complete vary of EiceDRIVER gate drivers, guaranteeing nice integration with all energy units, together with CoolSiC and IGBTs, simplifying design processes, and enhancing system reliability.
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